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Sub 0.1 Μm ArF Excimer Laser Lithography with Alternating Phase-Shifting Masks

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE(1995)

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摘要
We delineated 0.088 micrometers line and space patterns by using an etched-in phase-shifting mask. The etched area of the mask had good morphology and high transmittance for deep UV light. The phase-shifting angle of the etched area was well controlled within 180 +/- 5 degrees.
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