Movpe Growth Of Ganas Using Tertiarybutylarsine (Tba) And Dimethylhydrazine (Dmhy)
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS(1998)
摘要
GaNAs alloys were successfully grown on GaAs substrates by low-pressure MOVPE with all organometalic sources of triethylgallium (TEG), tertiarybutylarsine (TBA), and dimethylhydrazine(DMHy). We studied the incorporation behavior of nitrogen in terms of growth temperature and molar flow ratio of supplied sources. The ratio of TEA to the group III element, As/III, as low as 1.4 was found to be possible to grow GaNAs with good crystalline quality. Since the nitrogen concentration more than 3% was easily achieved by our growth technique, the combination of TBA-DMHy as V precursors is a candidate for the growth of other III-V alloys containing nitrogen. We observed decrease in PL intensity with enhancing nitrogen incorporation into solids: lowering growth temperature and increasing fractional flow ratio of DMHy. In order to recover from degradation in optical properties, Rapid Thermal Annealing (RTA) was demonstrated and found to be effective. Therefore MOVPE using TBA-DMHy combined with post-annealing is expected to obtain GaNAs alloys with high nitrogen concentration as well as excellent optical properties.
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关键词
low pressure,gaas,crystallization,mocvd,epitaxial growth,gallium arsenide,photoluminescence,solids,nitrogen,temperature
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