Directed self-assembly defectivity assessment. Part II

ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES IV(2012)

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摘要
The main concern for the commercialization of directed self-assembly (DSA) for semiconductor manufacturing continues to be the uncertainty in capability and control of defect density. Our research investigates the defect densities of various DSA process applications in the context of a 300mm wafer fab cleanroom environment; this paper expands substantially on the previously published DSA defectivity study(1) by reporting a defect density process window relative to chemical epitaxial pre-pattern registration lines; as well as investigated DSA based contact hole shrinking and report critical dimension statistics for the phase separated polymers before and after etch, along with positional accuracy measurements and missing via defect density.
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关键词
PS-b-PMMA,12nm,DSA,directed self-assembly,lamellae,quadruple patterning,defect density,dislocation,contact rectification,missing via,phase-separation defect,positional accuracy
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