Stability of High performance p-type SnO TFTs
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits(2015)
摘要
High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.
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关键词
p-type SnO TFT,thermal oxygen annealing process,tin-rich oxide film,polycrystalline SnO,field-effect mobility,threshold voltage shift,negative bias stress,acceptor passivation,hole trapping,SnO
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