Use of In-Situ Optical Emission Spectroscopy for Leak Fault Detection and Classification in Plasma Etching

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, pp. 395-401, 2013.

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Abstract:

In-situ optical emission spectroscopy (OES) is employed for leak detection in plasma etching system. A misprocessing is reported for significantly reduced silicon etch rate with chlorine gas, and OES is used as a supplementary sensor to analyze the gas phase species that reside in the process chamber. Potential cause of misprocessing reac...More

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