Degradation Modes Of Ingan Blue-Violet Laser Diodes Grown On Bulk Gan Wafers
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4(2007)
摘要
We investigated the degradation modes in the aging processes of (Al, In)GaN laser diodes on bulk GaN substrates of the dislocation density less than 5X10(6) cm(-2). The estimated lifetime exceeds 2,000 h under 160 mW pulse-operation at 60 degrees C. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates.
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关键词
ageing,semiconductor lasers
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