Abnormal Gate Oxide Thickening At Active Edge With Sin-Linered Shallow Trench Isolation
41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM(2003)
摘要
Abnormal gate oxide thickening at active edge (GOTAE) has been investigated in dynamic random access memories (DRAMs) with SiN-linered shallow trench isolation (STI), 1% of gaseous HCl, which is added during dry oxidation, plays a major role in inducing abnormal GOTAE by the mechanical interaction with thin SiN layer in STI. Other structural parameters such as thickness of trench sidewall oxide, liner SiN and sacrificial oxide are believed to influence the amount of oxide thickening. In order to avoid abnormal GOTAE, wet oxidation is introduced and turns out to be effective to suppress it. Electrical properties which change is susceptible to the extent of GOTAE are also presented in this paper.
更多查看译文
关键词
oxide thickening, SiN liner, STI, chlorine oxidation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络