Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

mitsuaki kaneko
mitsuaki kaneko
ryosuke kikuchi
ryosuke kikuchi

2013.

Cited by: 0|Bibtex|Views0
Other Links: academic.microsoft.com

Code:

Data:

Your rating :
0

 

Tags
Comments