Observation Of Anti-Stokes Fluorescence From Gan Film Grown On Si (111) Substrate
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5(2009)
摘要
Phonon-assisted anti-Stokes fluorescence has been observed in GaN film grown on Si (111) substrate. The donor-acceptor pairs and bound excitons have played primary roles in the generation of anti-Stokes fluorescence. (C) 2009 Optical Society of America
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关键词
laser cooling
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