Novel photodefined polymer-clad through-silicon via technology integrated with endpoint detection using optical emission spectroscopy

paragkumar a thadesar

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ja myung gu

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2013 24TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp. 56.0-61.0, 2013.

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Keywords:

3D integrationTSVSU-8 claddingoptical emission spectroscopyendpoint detection for Si DRIE etch

Abstract:

Silicon interposers with through-silicon vias (TSVs) have been widely explored to obtain high density and high bandwidth communication between chips. To reduce TSV electrical loss and stress, novel photodefined polymer-clad TSVs are fabricated. Moreover, to reduce via under or over etching during TSV fabrication and accurately predict the...More

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