Temperature stress response of germanium MOS capacitors with HfO2/HfSiON gate dielectrics

Temperature and electrical stress-induced degradation in germanium substrate MOS capacitors with HfO2/HfSiON gate dielectrics is reported. The accumulation capacitance decreases with temperature stress due to diffusion of germanium into the high-kappa dielectric. The interface trap and border trap densities decrease due to oxide growth at the oxide-germanium interface.