An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states

2015.

Cited by: 5|Bibtex|Views8
Other Links: academic.microsoft.com

Abstract:

This paper presents an analytic model for double gate (DG) tunnel FETs with 3D density of states. By evaluating two WKB integrals for mixed electron and hole tunneling, continuous current-voltage characteristics are generated with a single integral over the carrier energy. The model covers both heterojunction and homojunction TFETs. The r...More

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