An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states

This paper presents an analytic model for double gate (DG) tunnel FETs with 3D density of states. By evaluating two WKB integrals for mixed electron and hole tunneling, continuous current-voltage characteristics are generated with a single integral over the carrier energy. The model covers both heterojunction and homojunction TFETs. The r...More