Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaNbased light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising excellent current spreading, improved heat dissipation, and high light extraction with respect to the lateral one. Compared to conventional LED layer release techniques used for forming vertical LEDs (such as laser-liftoff and chemical lift-off techniques), our process distinguishes itself with being wafer-scalable (large area devices are possible) and substrate reuse opportunity.