Defect printability analysis by lithographic simulation from high resolution mask images
Proceedings of SPIE, the International Society for Optical Engineering(2009)
摘要
We report the development of Mask-LMC for defect printability evaluation from sub-200nm wavelength mask
inspection images. Both transmitted and reflected images are utilized, and both die-to-die and die-to-database inspection
modes are supported. The first step of the process is to recover the patterns on the mask from high resolution T and R
images by de-convolving inspection optical effects. This step uses a mask reconstruction model, which is based on
rigorous Hopkins-modeling of the inspection optics, and is pre-determined before the full mask inspection. After mask
reconstruction, wafer scanner optics and wafer resist simulations are performed on the reconstructed mask, with a wafer
lithography model. This step leverages Brion's industry-proven, hardware-accelerated LMC (Lithography
Manufacturability Check) technology1. Existing litho process models that are in use for Brion's OPC+ and verification
products may be used for this simulation. In the final step, special detectors are used to compare simulation results on the
reference and defect dice. We have developed detectors for contact CD, contact area, line and space CD, and edge
placement errors. The detection results on test and production reticles have been validated with AIMS TM .
更多查看译文
关键词
sensors,computer hardware,hardware accelerator,high resolution,lithography,reticles,contact area,modeling,process model,optics,databases,inspection
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要