Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance methodMarkxuefeng sunk s changliaosharon cuit p maomair i saadat[0]tomas palacios2013.Cited by: 0|Bibtex|Views0Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)Upload PDFUpload PPTYour rating :0 TagsCommentsSubmit
