Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

xuefeng sun
xuefeng sun
k s changliao
k s changliao
sharon cui
sharon cui
t p ma
t p ma
tomas palacios
tomas palacios

2013.

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Other Links: academic.microsoft.com

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