Determination of the Channel Doping Density in MOS Devices with High-K Gate Dielectrics

A new technique is outlined here for the extraction of the channel doping density of MOS nano-transistors with high permittivity ultrathin (equivalent oxide thickness (EOT) = 0.5 to 2.0 nm) gate dielectrics, using either the accumulation or the strong inversion MOS capacitance or both. This technique also obtains the doping density at the edge of the space charge layer at the onset of strong inversion, if the device is a MOSFET. Comparision of results from the new technique is made with the interface doping density and the doping profile obtained from the Ziegler technique.