Reliability of flip chip packages with high thermal conductivity heat spreader attach

Yuquan Li,R W Johnson, Peter Thompson, T Hooghan,Jeremias Libres

Electronic Components and Technology Conference(2008)

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摘要
Copper heat spreaders are often used in flip chip in package construction. While providing high thermal conductivity, Cu has a significantly higher coefficient of thermal expansion than Si. In this work, two heat spreader attachment materials, indium, for high power and polymeric adhesive for medium power applications, have been investigated. For In solder based attach, the Cu heat spreader was metallized with Ni/Au. Two thin film metallizations, Ti/Ni/Au and Ti/Au, have been studied for the Si backside. A nearly void free heat spreader attach has been achieved with vacuum soldering. For Ti/Ni/Au backside metallized Si die, there was no significant shear strength change after 1000 hours aging at 120 degrees C and there was no significant shear or pull strength variation after five lead free reflow cycles. The shear and pull failure mode was within the indium layer. For Ti/Au die backside metallization, the initial die pull strength and failure mode were a function of An thickness. With 3000 angstrom of Au, there is no significant variation for shear and pull strength after 600 hours aging at 120 degrees C or after five lead free solder reflow cycles. Failure was in the indium layer. For both types of die metallization, 24mm x 24mm Cu heat spreaders assembled on 22mm x 22mm Si die, exhibited no delamination after two lead free solder reflow cycles followed by 500 air to air thermal shock cycles (-40 degrees C to 85 degrees C). At 1000 cycles, slight delamination was found at the edges of the assembly for both die metallurgies. For adhesive based flat heat spreader attachment, a thermally conductive adhesive was used as the thermal interface and a non-thermally conductive adhesive was applied at the substrate corners to provide mechanical reinforcement of the heat spreader. After pre-conditioning then aging at 100 degrees C for 500 hours followed by 500 air-to-air thermal shock cycles (0 degrees C to 100 degrees C), no delamination was observed and there was no significant degradation in pull strength.
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关键词
indium,lead,copper,metallization,gold,failure mode,packaging,flip chip,thermal conductivity,titanium,thermal shock,nickel,aging,integrated circuit packaging,thin film,coefficient of thermal expansion,cu,shear strength
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