Surface Charging Induced Gate Oxide Degradation
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES X(2012)
摘要
In dual gate process, wet strip is an important procedure to remove the photoresist. Two wet strip methods of spinning-dry and batch type were evaluated in this study. Several methods were applied to measure the surface charging density [1, 2]. The Quantox system has been well known as an inline tester with noncontact measurement such as surface voltage, surface photo voltage (SPV), flatband voltage, surface barrier high, minority carrier diffusion length, recombination life time, generation life time, and et. al [3-6]. It is an useful in-line monitor equipment for oxide quality evaluation.In this study, we present direct experimental evidence that the surface charging induced gate oxide degradation during the dual gate oxide process at advance flash memory product. The wet etching methods of spinning-dry and batch type were employed to remove the photoresist in this study. Thus, the surface charging was induced by the wet etching method of spinning-dry type. Accordingly, the present research can provide an effective means to improve the surface charging effect in dual gate process.
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关键词
Surface charging,spinning dry,gate oxide degradation
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