Effect of r-plane (1–102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11–20) GaN

Journal of the Korean Physical Society, Volume 60, Issue 10, 2012, Pages 1649-1655.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.3938/jkps.60.1649
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Abstract:

We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of −0.2° ∼ +0.4°. Samples grown by using −0.2° and +0.2° off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growt...More

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