High-efficiency pin-type Amorphous Si Solar Cells Fabricated with a Low-electron-affinity Buffer Layer on the Front Electrode

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 443-447, 2011.

Cited by: 9|Views0

Abstract:

A strategy based on the reduction of absorption loss in the front doping layer and enhancement of the internal electric field in the intrinsic amorphous Si absorber layer attained by band lifting of the front doping layer is proposed. To demonstrate the strategy, we inserted a nitrogen-doped ZnO (ZnO:Al:N) buffer between the front transpa...More

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