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Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

a g lind

l henry aldridge

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joshua m o zide

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Journal of Vacuum Science & Technology B, 2015.

Cited by: 14|Bibtex|Views2|DOI:https://doi.org/10.1116/1.4914319

Other Links: academic.microsoft.com

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