Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B(2013)
摘要
AlGaN/AlN/GaN/sapphire, AlGaN/GaN/sapphire, AlGaN/GaN/Si, and InAlN/GaN/sapphire heterojunctions (HJs) were irradiated with 10 MeV electrons to fluences of 2 x 10(15) to 3.3 x 10(16) cm(-2). The main effects on the electrical properties were a decrease in two-dimensional electron gas (2DEG) mobility and the shift of capacitance-voltage (C-V) characteristics to more positive values. The 50% 2DEG mobility decrease occurred at a similar fluence of 3.3 x 10(16) cm(-2) for all AlGaN/GaN and AlGaN/AlN/GaN HJs, but at a much lower fluence of 1.3 x 10(16) cm(-2) for InAlN/GaN, which is in line with previous observations for neutron irradiated HJs. The shift of C-V characteristics is due to increased concentration of deep acceptor traps in the barrier/interface region. In AlGaN/GaN/Si transistors, the increase of concentration of deep barrier/interface traps with activation energy of 0.3, 0.55, and 0.8 eV was observed. This increase correlates with the observed degradation of gate lag characteristics of transistors after irradiation with 1.3 x 10(16) cm(-2) electrons. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4795210]
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