Investigation of Characteristics of Al 2 O 3 / n -In x Ga 1− x As ( x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures

The electrical properties of Al 2 O 3 / n -InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance–voltage ( C – V ) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al 2 O 3 . With higher In content, shorter minority-carrier response time and smaller C – V hysteresis are observed. The reduction of C – V hysteresis might be related to the reduction of Ga-bearing oxides in Al 2 O 3 /InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.