Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures

Materials Research Bulletin(2014)

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摘要
•We study carrier lifetimes of InGaN/GaN LEDs fabricated on different PSS.•Spatial EL distribution was investigated depending on the pattern structure.•The carrier lifetime of the LEDs was compared with the spatial EL distribution.
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关键词
A. Optical materials,A. Semiconductor,A. Thin films,B. Epitaxial growth,D. Optical properties
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