Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Amit Pawbake,Azam Mayabadi,Ravindra Waykar,R R Kulkarni,Ashok Jadhavar,V S Waman,Jayesh B Parmar,Somnath Bhattacharyya,Yuanron Ma,Rupesh S Devan,Habib M Pathan,S R Jadkar

Materials Research Bulletin（2016）

引用 16|浏览11

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摘要

•Boron doped nc-3C-SiC films prepared by HW-CVD using SiH4/CH4/B2H6.•3C-Si-C films have preferred orientation in (111) direction.•Introduction of boron into SiC matrix retard the crystallanity in the film structure.•Film large number of SiC nanocrystallites embedded in the a-Si matrix.•Band gap values, ETauc and E04 (E04>ETauc) decreases with increase in B2H6 flow rate.

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关键词

A. Carbides,B. Microstructure,C. Atomic force microscopy,C. Raman spectroscopy,D. Electrical properties

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