A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Takeyoshi Masuda,Keiji Wada,Toru Hiyoshi,Yu Saitoh,Hideto Tamaso,Mitsuhiko Sakai,Kenji Hiratsuka,Yasuki Mikamura,Masanori Nishiguchi,Tomoaki Hatayama,Hiroshi Yano

MATERIALS SCIENCE FORUM（2014）

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摘要

A breakdown of a conventional trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC MOSFET with buried p(+) regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 3.5 m Omega cm(2).

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关键词

4H-SiC,trench MOSFET,V-groove,Cl-2 thermochemical etching,buried p plus region,avalanche breakdown

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