Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.