The Conduction Characteristics of a 700 V Lateral Insulated-Gate Bipolar Transistor in a Junction Isolation Technology
IEEE Electron Device Letters(2015)
摘要
This letter presents the conduction characteristics of a 700 V n-type lateral insulated-gate bipolar transistor with quasi-vertical diffused metal-oxide-semiconductor (QVDMOS) field effect transistor fabricated with junction isolation technology. To improve the substrate leakage, a p-type buried layer (PBL) is inserted between the n-type drift region and the n-type buried layer. Measured results s...
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关键词
Anodes,Substrates,Voltage measurement,Junctions,Current measurement,Insulated gate bipolar transistors,Isolation technology
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