Analysis of Source Doping Effect in Tunnel FETs With Staggered Bandgap
IEEE Electron Device Letters(2015)
摘要
The effect of source doping on tunnel FET (TFET) currents is investigated analytically for the case of an exponential barrier. Source depletion is coupled to the channel potential profile through the continuity of field at the junction edge. Closed form WKB (Wentzel-Kramers-Brillouin) integral are carried out by considering mixed electron and hole tunneling in heterojunction TFETs with a staggered...
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关键词
Tunneling,Doping,Heterojunctions,Semiconductor process modeling,Analytical models,Photonic band gap,Logic gates
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