Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array

K Wang, Fangchang Hsueh,Yulun Lu,Tsungyu Chiang,Yihong Wu,Chiachun Liao,Lichen Yen,Tiensheng Chao

IEEE Electron Device Letters（2012）

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摘要

This letter is the first to successfully demonstrate the 2-bit/cell wrapped-selected-gate (WSG) SONOS thin-film transistor (TFT) memory using source-side injection (SSI). Because of the higher programming efficiency of SSI, a memory window of approximately 3 V can be easily achieved in 10 μs and 30 ms for the program and erase modes, respectively. In addition, we performed an excellent 2-bit/cell ...

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关键词

Thin film transistors,SONOS devices,Logic gates,Programming,Charge carrier processes,Silicon

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