Fabrication and Characterization of Thin-Barrier AlGaN/AlN/GaN HEMTs

IEEE Electron Device Letters(2011)

引用 23|浏览10
暂无评分
关键词
noise figure,logic gate,oscillations,ohmic contact,indexing terms,short channel effect,high electron mobility transistor,current density
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要