High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

IEEE Electron Device Letters, pp. 1680-1682, 2011.

Cited by: 30|Bibtex|Views6|DOI:https://doi.org/10.1109/LED.2011.2170149
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Abstract:

We demonstrate high-electron-mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures. These devices, with NR widths d in the 50-90 nm range, are fabricated through a top-down technology on planar InAlN/GaN samples grown on a SiC substrate. The electrical properties of the InAlN/GaN NRs have been characterized by transmi...More

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