High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

We demonstrate high-electron-mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures. These devices, with NR widths d in the 50-90 nm range, are fabricated through a top-down technology on planar InAlN/GaN samples grown on a SiC substrate. The electrical properties of the InAlN/GaN NRs have been characterized by transmission-line model measurements and in HEMT structures, and co...