High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons
IEEE Electron Device Letters, pp. 1680-1682, 2011.
We demonstrate high-electron-mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures. These devices, with NR widths d in the 50-90 nm range, are fabricated through a top-down technology on planar InAlN/GaN samples grown on a SiC substrate. The electrical properties of the InAlN/GaN NRs have been characterized by transmi...More
Full Text (Upload PDF)
PPT (Upload PPT)