Unipolar Resistive Switching Characteristics of a Memory Device With Oxygen Ion Conductor Buffer Layer

IEEE Electron Device Letters, pp. 803-805, 2012.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/LED.2012.2192252
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Abstract:

Oxygen ion migration is an important factor in the formation and rupture of a conducting filament to cause resistive switching (RS) behavior. A calcium oxide-doped zirconium oxide (CaO:ZrO2) oxygen ion conductor buffer layer is introduced between the Ti/ZrO2 interface of conventional Ti/ZrO2/Pt memory devices to improve their unipolar RS ...More

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