Unipolar Resistive Switching Characteristics of a Memory Device With Oxygen Ion Conductor Buffer Layer
IEEE Electron Device Letters, pp. 803-805, 2012.
Oxygen ion migration is an important factor in the formation and rupture of a conducting filament to cause resistive switching (RS) behavior. A calcium oxide-doped zirconium oxide (CaO:ZrO2) oxygen ion conductor buffer layer is introduced between the Ti/ZrO2 interface of conventional Ti/ZrO2/Pt memory devices to improve their unipolar RS ...More
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