Low ${\rm VDDmin}$ Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations
IEEE Journal of Solid-State Circuits(2015)
摘要
The designs of resistive RAM (ReRAM) macros are limited by 1) a small sensing margin, limited read- VDDmin, and slow read access time (TAC) caused by a high cell-resistance and small cell-resistance-ratio (R-ratio) and 2) poor power integrity and increased energy waste attributable to a large SET dc-current (IDC-SET) resulting from the wide distribution of write (SET)-times (TSET). This study prop...
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关键词
Sensors,Resistance,Switches,Transistors,Arrays,Switching circuits,Nonvolatile memory
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