Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

jie su
jie su
balakrishnan krishnan
balakrishnan krishnan
soo min lee
soo min lee

Journal of Materials Research, 2015.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1557/jmr.2015.194
Other Links: academic.microsoft.com
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Abstract:

We are reporting on stress engineering utilizing AlN/GaN superlattices (SLs) for epitaxy of GaN layers on 200 mm silicon substrates carried out in Veecou0027s Propel™ rotating disk, single wafer metal organic chemical vapor deposition (MOCVD) reactor. The Turbodisc® reactor is designed to have homogeneous alkyl/hydride flow distribution a...More

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