Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor
Journal of Materials Research, 2015.
We are reporting on stress engineering utilizing AlN/GaN superlattices (SLs) for epitaxy of GaN layers on 200 mm silicon substrates carried out in Veecou0027s Propel™ rotating disk, single wafer metal organic chemical vapor deposition (MOCVD) reactor. The Turbodisc® reactor is designed to have homogeneous alkyl/hydride flow distribution a...More
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