The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Current Applied Physics, pp. 1222-1225, 2015.

被引用0|引用|浏览0|DOI:https://doi.org/10.1016/j.cap.2015.07.009
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摘要

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1−xInxN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1−xInxN spacer layer is well-contro...更多

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