Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study

Current Applied Physics, pp. 267-270, 2013.

Cited by: 7|Bibtex|Views0|DOI:https://doi.org/10.1016/j.cap.2012.07.021
Other Links: academic.microsoft.com|www.sciencedirect.com

Abstract:

We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions du...More

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