Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study
Current Applied Physics, pp. 267-270, 2013.
We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions du...More
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