Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon
Physical Review B(2014)
摘要
Low hole mobility currently limits the efficiency of amorphous silicon photovoltaic devices. We explore three possible phenomena contributing to this low mobility: coordination defects, self-trapping ionization displacement defects, and lattice expansion allowing for hole wave-function delocalization. Through a confluence of experimental and first-principles investigations, we demonstrate the fluidity of the relative prevalence of these defects as film stress and hydrogen content are modified, and that the mobility of a film is governed by an interplay between various defect types.
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