Mechanism of the sensitivity enhancement in TiO 2 hollow-hemisphere gas sensors

Electronic Materials Letters(2018)

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摘要
We investigate the mechanism of the sensitivity enhancement in TiO 2 hollow-hemisphere gas sensors. Using monolayer close-packed polystyrene microspheres as a sacrificial template, a TiO 2 thin film based on a network of ordered hollow hemispheres is formed by room-temperature sputtering deposition and subsequent calcination at 550°C. A thin film gas sensor based on the TiO 2 hollow hemispheres exhibits a 225% change in its resistance when exposed to 50 ppm CO at 250°C, whereas a gas sensor based on a flat TiO 2 film shows an 85% change. Numerical analysis reveals that the enhancement of the gas sensitivity in the hollow-hemisphere gas sensor is simply the result of an increase in the effective surface area for the adsorption of gas molecules.
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关键词
numerical analysis,surface area,thin film,room temperature
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