Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency
Nano Research, Volume 9, Issue 2, 2015, Pages 363-371.
In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency perf...More
Full Text (Upload PDF)
PPT (Upload PPT)