Radio frequency transistors based on ultra-high purity semiconducting carbon nanotubes with superior extrinsic maximum oscillation frequency

Nano Research, Volume 9, Issue 2, 2015, Pages 363-371.

Cited by: 11|Bibtex|Views2|DOI:https://doi.org/10.1007/s12274-015-0915-7
Other Links: academic.microsoft.com|link.springer.com

Abstract:

In this paper, we report polyfluorene-separated ultra-high purity semiconducting carbon nanotube radio frequency transistors with a self-aligned T-shape gate structure. Because of the ultra-high semiconducting tube purity and self-aligned T-shape gate structure, these transistors showed an excellent direct current and radio frequency perf...More

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