High Efficiency InGaN Blue Light-Emitting Diode With ${>}{\rm 4}\hbox{-}{\rm W}$ Output Power at 3 A

IEEE Photonics Technology Letters, pp. 649-652, 2014.

Cited by: 4|Bibtex|Views0|DOI:https://doi.org/10.1109/LPT.2014.2301874
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Abstract:

This letter reports high-power and high-efficiency characteristics of the InGaN-based blue light-emitting diode (LED) operating at > 10-W electrical input power in a single-chip package. The LED chip is fabricated as a vertical-injection structure with chip dimensions of 1.8 mm × 1.8 mm. InGaN/GaN short-period superlattice (SL) structures...More

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