Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

IEEE Transactions on Nuclear Science, pp. 4439-4445, 2013.

Cited by: 24|Bibtex|Views16|DOI:https://doi.org/10.1109/TNS.2013.2289383
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Abstract:

Charge collection mechanisms in AlGaN/GaN MOS-HEMTs are investigated. Device types include those with no gate oxide, and those with HfO2 and Al2O3 gate oxides. Simultaneous charge collection is observed at the gate and the drain or the source, depending on strike location. Heavy ion data coupled with device simulations show that the intro...More

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