Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors
IEEE Transactions on Nuclear Science(2013)
摘要
Charge collection mechanisms in AlGaN/GaN MOS-HEMTs are investigated. Device types include those with no gate oxide, and those with HfO2 and Al2O3 gate oxides. Simultaneous charge collection is observed at the gate and the drain or the source, depending on strike location. Heavy ion data coupled with device simulations show that the introduction of a thin HfO2 layer in the gate stack introduces on...
更多查看译文
关键词
Aluminum gallium nitride,Gallium nitride,HEMTs,Single event transients,Transient analysis
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要