Design and Epitaxy of the Material for a 1 550 nm PNP InGaAsP-InP Heterojunction Bipolar Transistor Laser段子刚 duan zigang,柴广跃 chai guangyueActa Photonica Sinica(2010)引用 23|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要