Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013.

Cited by: 2|Bibtex|Views1|DOI:https://doi.org/10.7567/JJAP.52.08JC04
Other Links: academic.microsoft.com

Abstract:

We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano-and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic fo...More

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