Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano-and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic fo...More