Thermal and Optical Properties of InGaN/GaN Green Vertical Light-Emitting Diodes on Molybdenum Substrate for Different Submounts
JAPANESE JOURNAL OF APPLIED PHYSICS(2013)
摘要
We reported the thermal and optical properties of InGaN/GaN multiple quantum wells green (lambda similar to 525 nm) vertical light-emitting diodes (VLEDs) with a large chip size of 1 x 1 mm(2) on molybdenum substrate. In the temperature range of 298-358 K, the temperature-dependent measurement of the packaged VLEDs on metal printed circuit board (MPCB) submount was performed, indicating a characteristic temperature of similar to 456 K at 350 mA. At 298 K and 350 mA, the optical output power, operating voltage, and peak emission wavelength were measured to be 110.7 mW, 3.52 V, and 524.1 nm, respectively, and the view angle of Lambertian radiation pattern was about 120 degrees at full width at half maximum. The forward voltage method was used to measure the junction temperature (T-j) of VLED devices. From the measured T-j values, the thermal resistance (Rth) value was experimentally obtained to be similar to 14.62 K/W for VLEDs on the MPCB. In comparison, the Rth value of the devices on copper submount was decreased to similar to 9.16 K/W. (C) 2013 The Japan Society of Applied Physics
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