Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110)

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1143/JJAP.49.105201
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Abstract:

The local tunneling barrier height at and around subsurface Zn acceptor atoms on GaAs(110) has been investigated by scanning tunneling microscopy (STM) and local barrier height (LBH) imaging. The measured LBH showed the bias dependence, which was in good agreement with the theoretical simulation that takes into account the effect of tip-i...More

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