Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000\bar{1}) Substrate by Molecular-Beam EpitaxyMarkhironori okumura[0]tsunenobu kimoto[0]jun suda[0]Japanese Journal of Applied Physics, 2012.Cited by: 0|Bibtex|Views0Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceUpload PPTYour rating :0 TagsCommentsSubmit
