Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

mitsuaki kaneko
mitsuaki kaneko
ryosuke kikuchi
ryosuke kikuchi

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013.

Cited by: 2|Bibtex|Views0|DOI:https://doi.org/10.7567/JJAP.52.08JE21
Other Links: academic.microsoft.com

Abstract:

To obtain a high-crystalline-quality AlN/GaN short-period superlattice with higher average GaN mole fraction, the effects of the thicknesses of AlN barrier and GaN well layers on the superlattice growth were investigated. Coherent growth with an average GaN mole fraction of 20% was realized by reducing the AlN barrier layer thickness to 8...More

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