Unipolar Resistive Switching in ZrO2 Thin Films

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013.

Cited by: 7|Bibtex|Views8|DOI:https://doi.org/10.7567/JJAP.52.041101
Other Links: academic.microsoft.com

Abstract:

Unipolar resistive switching behaviors including bistable memory switching and monostable threshold switching were found in ZrO2 thin films fabricated by a simple sol-gel method with the Ti/ZrO2/Pt structure. The multilevel resistive switching behaviors were also revealed by varying the compliance current from 9 to 38 mA. Physical mechani...More

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