Unipolar Resistive Switching in ZrO2 Thin Films
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013.
Unipolar resistive switching behaviors including bistable memory switching and monostable threshold switching were found in ZrO2 thin films fabricated by a simple sol-gel method with the Ti/ZrO2/Pt structure. The multilevel resistive switching behaviors were also revealed by varying the compliance current from 9 to 38 mA. Physical mechani...More
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