Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High‐Dose, N+ Ion ImplantationMarkbumjoon kim[0]kwangtaek lee[0]samseok jang[0]junggeun jhin[0]seungjae lee[0]jonghyeob baek[0]youngmoon yu[0]jaesang lee[0]dongjin byun[0]Chemical Vapor Deposition, 2010.Cited by: 5|Bibtex|Views0|DOI:https://doi.org/10.1002/cvde.200906807Other Links: academic.microsoft.comKeywords: vaporchemicalion implantationdepositionmocvdCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
